MoSys, Inc. (NASDAQ:MOSY), a provider of high-density system-
on-chip (SoC) embedded memory intellectual property (IP) solutions and
BiTMICRO Networks, a provider of high-performance non-volatile
solid-state disk and semiconductor solutions, announced today that
BiTMICRO has become the latest licensee of MoSys' 1T-SRAM(R)
embedded memory macro technology. BiTMICRO will leverage MoSys'
technology to add new performance, latency and area advantages to its
range of E-Disk(R) solid-state storage solutions.
At a speed of 350 Mhz in a standard 90-nm CMOS logic process, the
MoSys-enabled BiTMICRO memory macro reaches a performance level that is
unmatched by other embedded memory technologies.
"BiTMICRO's solid-state disk drive and flash disk-drive
solutions are ideal for harsh, demanding, and mission-critical
applications in the industrial, embedded, computer, communication,
medical, military, and aerospace industries," said Rey Bruce,
president and CEO of BiTMICRO Networks. "MoSys' 1T-SRAM
technology was the only available solution that could meet the high
performance, low latency and demanding reliability requirements of our
system design."
"MoSys and BiTMICRO are collaborating closely to provide this
performance-optimized design on a standard 90-nm CMOS process,"
said Chet Silvestri, president and CEO of MoSys. "The broad range
of applications for the E-Disk solution further extends the reach of
MoSys' 1T-SRAM technology into areas with demanding portability,
durability, and speed requirements."
About BiTMICRO Networks
BiTMICRO(R) Networks is a provider of high performance solid state
disk and non-volatile semiconductor storage solutions. The
company's flagship product, the E-Disk(R) SSD, is offered with
SATA, SCSI Narrow and Wide, IDE/ATA and Fibre Channel interfaces in
2.5-inch and 3.5-inch hard disk drive footprints, and 19-inch rack mount
configurations scalable up to several terabytes of pure solid state
storage.
For more information, visit http://www.bitmicro.com.
About MoSys, Inc.
Founded in 1991, MoSys (NASDAQ:MOSY) , develops, licenses and
markets industry-leading embedded memory IP for semiconductors.
MoSys' patented 1T-SRAM(R) and 1T-FLASH(R) technologies offer a
combination of high density, low power consumption, high speed and low
cost that is unmatched by other memory technologies. MoSys licensees
have shipped more than 100 million chips incorporating 1T-SRAM,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085.
For more information, visitt http://www.mosys.com or call
408/731-1832.
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