Physics and technology of high-k gate dielectrics; proceedings.

9781566775700

Physics and technology of high-k gate dielectrics; proceedings.

Physics and Technology of High-k Gate Dielectrics (5th: 2007: Washington, DC) Ed. by S. Kar et al.

Electrochemical Society

2007

660 pages

$118.00

Hardcover

ECS transactions; v.11, no.4

TA418

These proceedings of the October 2007 symposium includes papers reflecting the diversity of this dynamic field, with no less than 11 major topics. These include high dielectric constant ("high-k") materials (based or not based on Hf), defects and interfaces, characterization (electrical and physical/chemical) reliability, metal gate electrodes, process integration, high mobility substrates and high-k memories. Topics of invited papers include the tight distribution of dielectric characteristics of HfSiON in metal gate devices, dynamical properties of orthorhombic phases of Group IVb transition metal oxides, interface characterization in nanoelectronics, theoretical studies on Fermi level pining of Hf-based high-k gate stacks based on thermodynamics, the role of ionicity in defect formation in Hf-based dielectrics, challenges in gate stack etching and cleaning, crystalline rare-earth oxides as high-k materials for future CMOS technologies, high-k characterization by RFCV, uses for germanium, and the essence of VFB shifts in high-k gate stacks. Includes author index.

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